au.\*:("LE JONCOUR M")
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X'PERT : un système modulaire de diffraction de rayons X à double appareillageJONCOUR, M. C.Analusis (Imprimé). 1991, Vol 19, Num 9, pp M43-M44, issn 0365-4877Article
L'encombrement, la mémorisation et l'oubli publicitairesJONCOUR, M; JALLAIS, J.1993, s.pThesis
X-ray transmission topography of GaAs/InGaAs strained layer superlatticesJONCOUR, M. C; MELLET, R; CHARASSE, M. N et al.Journal of crystal growth. 1986, Vol 75, Num 2, pp 295-300, issn 0022-0248Article
Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxyPRASEUTH, J. P; JONCOUR, M. C; GERARD, J. M et al.Journal of applied physics. 1988, Vol 63, Num 2, pp 400-403, issn 0021-8979Article
Investigation of surface roughness of molecular beam epitaxy Ga1-xAlxAs layers and its consequences on GaAs/Ga1-xAlxAs heterostructuresALEXANDRE, F; GOLDSTEIN, L; LEROUX, G et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 4, pp 950-955, issn 0734-211XArticle